First Principles Calculations of the Effect of Stress in the I-V Characteristics of the CoSi2/Si Interface
| Autor: | Shesh Mani Pandey, Oscar D. Restrepo, El Mehdi Bazizi, Qun Gao, Eduardo Cruz-Silva |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Silicon Ab initio chemistry.chemical_element 02 engineering and technology Semiconductor device 021001 nanoscience & nanotechnology Thermal conduction 01 natural sciences Brillouin zone Stress (mechanics) chemistry.chemical_compound chemistry Electrical resistivity and conductivity 0103 physical sciences Silicide 0210 nano-technology |
| Zdroj: | 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). |
| DOI: | 10.1109/sispad.2018.8551750 |
| Popis: | We present ab initio-based electronic transport calculations on the effect of uniaxial and bi-axial stress on the CoSi 2 /n Si interface resistivity for the three main silicon crystallographic directions. For the [001] case, we identify two distinctive low and high bias conduction regimes for both compressive and tensile stress. In these regimes, the current is dominated by electronic transmission pathways near the Γ point for bias up to ~0.1V, while for higher bias it is dominated by transmission at the (±1/2, ±1/2) conduction band valleys of the Brillouin zone, which results in a contact resistivity decrease of up to 30% at 0.2V bias. This effect is less pronounced for the [110] direction, and negligible for the [111] case due to the symmetry of the Si conduction band valleys along these directions. This study provides insight into stress-based optimization pathways for contact resistivity reduction of silicide interfaces in next generation semiconductor devices. |
| Databáze: | OpenAIRE |
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