Investigation of rapid thermal annealing on Cu(In,Ga)Se2 films and solar cells
| Autor: | Sheng S. Li, Omar Manasreh, J. M. Howard, S. Easwaran, Timothy J. Anderson, Woo Kyoung Kim, Valentin Craciun, Oscar D. Crisalle, S. Yoon, Xuege Wang |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment business.industry Annealing (metallurgy) Mineralogy Microstructure Copper indium gallium selenide solar cells Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Hall effect law Solar cell Optoelectronics Microstructure morphology Device simulation Rapid thermal annealing business |
| Zdroj: | Solar Energy Materials and Solar Cells. 90:2855-2866 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/j.solmat.2006.04.011 |
| Popis: | Rapid thermal annealing (RTA), with fast ramp rate, was performed on several Cu(In,Ga)Se2 (CIGS) films and solar cells under various peak annealing temperatures and holding times. Characterizations were made on CIGS films and cells before and after RTA treatments to study effects of RTA on the CIGS film properties and cell performance. In addition, AMPS-1D device simulation program was used to study effects of defect density on the cell performance by fitting the experimental data of RTA-treated CIGS cells. The results show that RTA treatments under optimal annealing condition can provide significant improvements in the electrical properties of CIGS films and cell performance while preserving the film composition and microstructure morphology. r 2006 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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