Electrical properties and transport mechanisms in phase change memory thin films of quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors
| Autor: | I. V. Sagunova, Petr Lazarenko, E. N. Redichev, A. V. Babich, Sergey Kozyukhin, N. A. Bogoslovskiy, Alexey Sherchenkov |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
business.industry Chalcogenide Binary number Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Line (electrical engineering) Electronic Optical and Magnetic Materials Phase-change memory chemistry.chemical_compound Semiconductor chemistry Electrical resistivity and conductivity 0103 physical sciences Optoelectronics Thin film 0210 nano-technology business |
| Zdroj: | Semiconductors. 51:146-152 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782617020191 |
| Popis: | The temperature dependences of the resistivity and current–voltage (I–V) characteristics of phase change memory thin films based on quasi-binary-line GeTe–Sb2Te3 chalcogenide semiconductors Ge2Sb2Te5, GeSb2Te5, and GeSb4Te7 are investigated. The effect of composition variation along the quasibinary line on the electrical properties and transport mechanisms of the thin films is studied. The existence of three ranges with different I–V characteristics is established. The position and concentration of energy levels controlling carrier transport are estimated. The results obtained show that the electrical properties of the thin films can significantly change during a shift along the quasi-binary line GeTe–Sb2Te3, which is important for targeted optimization of the phase change memory technology. |
| Databáze: | OpenAIRE |
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