Influence of Sputtering Pressure on Properties of Ti, Ga Co-Doped Zinc Oxide Thin Films
Autor: | 高金霞 Gao Jin-xia, 史晓菲 Shi Xiao-fei, 刘汉法 Liu Han-fa, 郭美霞 Guo Mei-xia |
---|---|
Rok vydání: | 2011 |
Předmět: |
Materials science
chemistry.chemical_element Zinc Sputter deposition Microstructure Zinc oxide thin films Electronic Optical and Magnetic Materials chemistry Sputtering Electrical resistivity and conductivity Signal Processing Transmittance Composite material Instrumentation Transparent conducting film |
Zdroj: | Chinese Journal of Liquid Crystals and Displays. 26:54-58 |
ISSN: | 1007-2780 |
DOI: | 10.3788/yjyxs20112601.0054 |
Popis: | Transparent conducting Ti,Ga co-doped zinc oxide films(TGZO) with high transparency and relatively low resistivity have been successfully prepared by DC magnetron sputtering at room temperature.Micro-structural,optical and electrical properties of TGZO films were investigated.XRD photos indicate that the sputtering pressure plays an important role on the microstructure and electrical resistivity of TGZO films.The electrical resistivity decreases when the sputtering pressure increases from 1.0 Pa to 11 Pa.When the sputtering pressure is 11 Pa,it is obtained that the lowest resistivity is 1.48×10-4 Ω·cm.The electrical resistivity increases when the sputtering pressure increases from 11 Pa to 16 Pa.All the films present a high transmittance of above 90% in the visible range. |
Databáze: | OpenAIRE |
Externí odkaz: |