Reversible control of the metal-insulator transition in V2O3 thin films through plasma hydrogenation

Autor:	M T Sultan, U B Arnalds
Rok vydání:	2022
Předmět:	Condensed Matter Physics Mathematical Physics Atomic and Molecular Physics and Optics
Zdroj:	Physica Scripta. 97:035806
ISSN:	1402-4896 0031-8949
Popis:	We investigate the effect of hydrogen plasma treatment on the metal-insulator transition (MIT) of epitaxial V2O3 films grown on c-Al2O3. The films were exposed to plasma at constant power for varying intervals. With increasing hydrogenation the films display a suppression of the MIT magnitude and temperature due to neutralization of structural defects and passivation of unpaired bonds by incorporation of atomic hydrogen as supported by relaxation in strain by XRD and Raman spectroscopy analysis, while stabilizing the metallic phase due to reduction in Peierls dimerization of V-V bonds. Heating to 350-400 °C the electrical characteristics of the film in the as-grown state are regained showing the possibility of reversibly controlling the MIT characteristics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::57c653cdc88ebb8985b5b2ec7e2ba90b https://doi.org/10.1088/1402-4896/ac50c5 Zobrazit plný text záznamu