On semimetal-semiconductor transition in thin Bi films
| Autor: | E. Rogacheva, A. Meriuts, M. Dresselhaus |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Condensed matter physics business.industry Significant difference chemistry.chemical_element Electron Acceptor Semimetal Bismuth Condensed Matter::Materials Science Semiconductor Effective mass (solid-state physics) chemistry Condensed Matter::Strongly Correlated Electrons Metal–insulator transition business |
| Zdroj: | AIP Conference Proceedings. |
| ISSN: | 0094-243X |
| Popis: | Quantum size effects in thin semimetallic Bi films can manifest themselves in the form of a semimetal—semiconductor transition occurring under decreasing Bi layer thickness. A model of a semimetal—semiconductor transition, which takes into account a significant difference in electron and hole effective masses in Bi and the presence of the surface acceptor states is proposed. Using the proposed model, a more accurate interpretation of the experimental results is given. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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