Influence of Electric Field on the Activation Energy of Local Levels in Semiconductors with Layered (GaSe) and Cubic (Ga2Se3) Structures
| Autor: | Arif M. Pashayev, V. T. Majidova, B. H. Tagiyev, O. B. Tagiyev, Ilham Z. Sadikhov |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Chalcogenide business.industry Thermionic emission 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Instability Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry.chemical_compound Semiconductor chemistry Electrical resistivity and conductivity Electric field Ionization 0103 physical sciences 0210 nano-technology business |
| Zdroj: | Semiconductors. 53:210-214 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The results of measuring the electrical conductivity of layered crystals (GaSe, GaTe, and their solid solutions) and cubic crystals (Ga2Se3) in strong electric fields (up to 5 × 105 V/cm) in the temperature range of 77–300 K are presented. These results are compared with predictions of the phenomenological theory of concentration instability in semiconductors. This theory considers the role of the Frenkel effect, which is related to the thermionic ionization of traps causing instability in semiconductors with an S-shaped current–voltage (I–V) characteristic. Based on the results of measuring the electrical conductivity of layered and cubic crystals exhibiting the Frenkel effect and described by the theory of current instability in semiconductors, the free-carrier concentration in the aforementioned types of chalcogenide semiconductors is estimated to be n = (3 × 1013–4 × 1015) cm–3. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
| Nepřihlášeným uživatelům se plný text nezobrazuje | K zobrazení výsledku je třeba se přihlásit. |