Modification of the van der Waals interaction at the Bi2Te3 and Ge(111) interface
| Autor: | Kenji Nawa, Balati Kuerbanjiang, Susannah Speller, Vlado K. Lazarov, Guillermo Bárcena-González, Demie Kepaptsoglou, Quentin M. Ramasse, Giuseppe Nicotra, Pedro L. Galindo, Thorsten Hesjedal, Kohji Nakamura, Arsham Ghasemi, P. J. Hasnip |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) 02 engineering and technology Adhesion Electron 021001 nanoscience & nanotechnology 01 natural sciences symbols.namesake Chemical physics Topological insulator 0103 physical sciences Scanning transmission electron microscopy symbols General Materials Science van der Waals force 010306 general physics 0210 nano-technology Spectroscopy Layer (electronics) |
| Zdroj: | Physical Review Materials. 5 |
| ISSN: | 2475-9953 |
| DOI: | 10.1103/physrevmaterials.5.024203 |
| Popis: | We present a structural and density-functional theory study of the interface of the quasi-twin-free grown three-dimensional topological insulator Bi2Te3 on Ge(111). Aberration-corrected scanning transmission electron microscopy and electron energy-loss spectroscopy in combination with first-principles calculations show that the weak van der Waals adhesion between the Bi2Te3 quintuple layer and Ge can be overcome by forming an additional Te layer at their interface. The first-principles calculations of the formation energy of the additional Te layer show it to be energetically favorable as a result of the strong hybridization between the Te and Ge. |
| Databáze: | OpenAIRE |
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