Chemical Etching of Si1 − x Ge x in HF : H 2 O 2 : CH 3 COOH
| Autor: | Kang L. Wang, T. K. Cams, M. O. Tanner |
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| Rok vydání: | 1995 |
| Předmět: |
Dopant
Renewable Energy Sustainability and the Environment Analytical chemistry Mineralogy Heterojunction Condensed Matter Physics Isotropic etching Diluent Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Acetic acid Hydrofluoric acid chemistry Etching (microfabrication) Materials Chemistry Electrochemistry Hydrogen peroxide |
| Zdroj: | Journal of The Electrochemical Society. 142:1260-1266 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2044161 |
| Popis: | The properties of a highly selective chemical etchant composed of hydrofluoric acid, hydrogen peroxide, and acetic acid (HF:H 2 O 2 :CH 3 COOH) is investigated in etching SiGe/Si heterostructures. This solution has been found to etch Si 1-x Ge x much faster than Si over the entire range of Ge contents. The etch rate dependences are presented as functions of solution composition, Ge content, dopant type, diluent type, temperature, and stirring. Both n-type and p-type Si 1-x Ge x layers with Ge contents of 0≤x≤0.60 and 0≤x≤1.00, respectively, are investigated. It is found that the n-type samples etch at a faster rate than p-type for all Ge contents examined. When CH 3 COOH is used as the diluent instead of H 2 O a significant enhancement in the etch rate results for all concentrations of Ge studied. Also, the amount of H 2 O 2 in the presence of CH 3 COOH has a significant effect on the magnitude of the etch rate as well as its behavior over time |
| Databáze: | OpenAIRE |
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