Very High Frequency Silicon Nanowire Electromechanical Resonators
| Autor: | Xiaofeng Feng, Michael L. Roukes, Peidong Yang, Rongrui He |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Signal processing
Materials science business.industry Mechanical Engineering Bioengineering Nanotechnology Very high frequency General Chemistry Condensed Matter Physics Characterization (materials science) High resistance Resonator Responsivity Quality (physics) Optoelectronics General Materials Science business Silicon nanowires |
| Zdroj: | Nano Letters. 7:1953-1959 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/nl0706695 |
| Popis: | We demonstrate very high frequency (VHF) nanomechanical resonators based upon single-crystal silicon nanowires (SiNWs), which are prepared by the bottom-up chemical synthesis. Metallized SiNW resonators operating near 200 MHz are realized with quality factor Q ≈ 2000−2500. Pristine SiNWs, with fundamental resonances as high as 215 MHz, are measured using a VHF readout technique that is optimized for these high resistance devices. The pristine resonators provide the highest Q's, as high as Q ≈ 13 100 for an 80 MHz device. SiNWs excel at mass sensing; characterization of their mass responsivity and frequency stability demonstrates sensitivities approaching 10 zeptograms. These SiNW resonators offer significant potential for applications in resonant sensing, quantum electromechanical systems, and high frequency signal processing. |
| Databáze: | OpenAIRE |
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