Etching of p- and n-type doped monocrystalline diamond using an ECR oxygen plasma source
| Autor: | Mathieu Bernard, J. Pelletier, T. Lagarde, Etienne Gheeraert, Pierre Muret, Alain Deneuville, E. Treboux, N. Casanova |
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| Rok vydání: | 2002 |
| Předmět: |
Chemistry
Mechanical Engineering Doping Analytical chemistry Mineralogy Diamond General Chemistry Plasma engineering.material Electronic Optical and Magnetic Materials Monocrystalline silicon Crystal Etching (microfabrication) Oxygen plasma Materials Chemistry engineering Electrical and Electronic Engineering Reactive-ion etching |
| Zdroj: | Diamond and Related Materials. 11:828-832 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/s0925-9635(01)00563-5 |
| Popis: | Simultaneous etching of NID, lightly boron-doped, phosphorus-doped homoepitaxial CVD films and Ib HPHT crystal was achieved at RT in a home-made reactor producing O2 ECR plasma which was homogeneous on approximately 200 cm−2. Etching rates varying from 60 (at −30 V) to 40 or 120 nm/min (at −140 V) are obtained with n- or p-type-doped samples, respectively. These etching rates are higher than those with O2 RF plasma, and those with previous inhomogeneous O2 ECR plasma with samples at 100 °C. |
| Databáze: | OpenAIRE |
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