Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
| Autor: | Trevor Martin, Anders Lundskog, Galia Pozina, David J. Wallis, Anelia Kakanakova-Georgieva, R. Lossy, Michael J. Uren, Erik Janzén, Martin Kuball, Joachim Würfl, J.O. Maclean, K.P. Hilton, James W Pomeroy, Gernot Riedel, R. Pazirandeh, Urban Forsberg, Frank Brunner |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Nucleation Wide-bandgap semiconductor Gallium nitride Chemical vapor deposition High-electron-mobility transistor Epitaxy Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Operating temperature Electronic engineering Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 30:103-106 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2008.2010340 |
| Popis: | Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation layer (NL) needed between GaN and SiC substrates for high-quality heteroepitaxy. Using 3-D time-resolved Raman thermography, it is shown that modifying the NL used for GaN on SiC epitaxy from the metal-organic chemical vapor deposition (MOCVD)-grown standard AlN-NL to a hot-wall MOCVD-grown AlN-NL reduces NL TBR by 25%, resulting in ~10% reduction of the operating temperature of AlGaN/GaN HEMTs. Considering the exponential relationship between device lifetime and temperature, lower TBR NLs open new opportunities for improving the reliability of AlGaN/GaN devices. |
| Databáze: | OpenAIRE |
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