Thermodynamic stability of binary oxides in contact with silicon
| Autor: | K. J. Hubbard, Darrell G. Schlom |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Silicon Mechanical Engineering Oxide Thermodynamics chemistry.chemical_element Condensed Matter Physics Chemical reaction Gibbs free energy symbols.namesake chemistry.chemical_compound chemistry Mechanics of Materials symbols General Materials Science Chemical stability Thin film Ternary operation Phase diagram |
| Zdroj: | Journal of Materials Research. 11:2757-2776 |
| ISSN: | 2044-5326 0884-2914 |
| DOI: | 10.1557/jmr.1996.0350 |
| Popis: | Using tabulated thermodynamic data, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted. Reactions between silicon and each binary oxide at 1000 K, including those involving ternary phases, were considered. Sufficient data exist to conclude that all binary oxides except the following are thermodynamically unstable in contact with silicon at 1000 K: Li2O, most of the alkaline earth oxides (BeO, MgO, CaO, and SrO), the column IIIB oxides (Sc2O3, Y2O3, and Re2O3, where Re is a rare earth), ThO2, UO2, ZrO2, HfO2, and Al2O3. Of these remaining oxides, sufficient data exist to conclude that BeO, MgO, and ZrO2 are thermodynamically stable in contact with silicon at 1000 K. Our results are consistent with reported investigations of silicon/binary oxide interfaces and identify candidate materials for future investigations. |
| Databáze: | OpenAIRE |
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