Low-Temperature Deposition of Aluminum Oxide on Polyethersulfone Substrate Using Plasma-Enhanced Atomic Layer Deposition
| Autor: | Sun Jin Yun, Jin Ho Lee, Jung Wook Lim |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
General Chemical Engineering Nanotechnology Substrate (electronics) Plasma Bending Deposition temperature Atomic layer deposition Low temperature deposition Chemical engineering Electrochemistry General Materials Science Electrical and Electronic Engineering Physical and Theoretical Chemistry Layer (electronics) Aluminum oxide |
| Zdroj: | Electrochemical and Solid-State Letters. 7:C13 |
| ISSN: | 1099-0062 |
| Popis: | Very uniform Al 2 O 3 films could be deposited on polyethersulfone (PES) by plasma-enhanced atomic layer deposition (PEALD) using O 2 as O-precursor at temperatures ranging from 90 to 150°C. Although the use of rf plasma was prone to induce bending of the plastic substrate, lowering rf power and deposition temperature could eliminate the bending of the PES substrate in PEALD of an Al 2 O 3 layer. At 100°C, Al 2 O 3 films were deposited successfully by PEALD with 0.3 s rf pulse width and 300 W, with no measurable bending of substrate and decrease of deposition rate. The etch rate of PEALD Al 2 O 3 films deposited at 100°C, was slow as a factor of 2.6 compared to that of ALD Al 2 O 3 films deposited at 100°C. |
| Databáze: | OpenAIRE |
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