Effect of CHF3 Addition on Reactive Ion Etching of Aluminum Using Inductively Coupled Plasma
| Autor: | Kazuyuki Sugita, Junichi Tonotani, Shuichi Saito |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Plasma etching
Passivation Chemistry technology industry and agriculture General Engineering Analytical chemistry General Physics and Astronomy macromolecular substances Isotropic etching X-ray photoelectron spectroscopy Etching (microfabrication) Dry etching Inductively coupled plasma Reactive-ion etching |
| Zdroj: | Japanese Journal of Applied Physics. 44:2971 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.44.2971 |
| Popis: | The role of CHF3 gas addition in reactive ion etching (RIE) processes using inductively coupled plasma for aluminum wirings were investigated. With increasing of the amount of CHF3 gas addition to the etching gas, the pattern profile changed from reverse to ordinary taper and the pattern width increased. It was considered that by adding CHF3 to the main etching gas, a larger amount of passivation layer deposited on the sidewall of the resist and Al pattern, which suppressed side etching of the pattern. To clarify the role of CHF3 addition, XPS, FT-IR and TDS analyses were carried out to study the structure of the passivation layer. Consequently, it is considered that the pattern sidewall is composed of AlF3, an organic polymerized film and a passivation layer including ammonium salt and B oxide. Due to the addition of CHF3 gas into the etching gas, AlF3 is additionally formed, which is deposited on the pattern sidewall, resulting in the change of the etched pattern profile and width. |
| Databáze: | OpenAIRE |
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