Dramatically Enhanced Efficiency in Ultra-Fast Silicon MSM Photodiodes Via Light Trapping Structures
Autor: | Toshishige Yamada, M. Saif Islam, Hilal Cansizoglu, Ahmed S. Mayet, Soroush Ghandiparsi, Ekaterina Ponizovskaya Devine, Shih-Yuan Wang, Aly F. Elrefaie, Hasina H. Mamtaz, Yang Gao, Cesar Bartolo-Perez |
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Rok vydání: | 2019 |
Předmět: |
Optical fiber
Materials science Silicon business.industry chemistry.chemical_element Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Photodiode Full width at half maximum Responsivity Semiconductor chemistry law Optoelectronics Electrical and Electronic Engineering Photonics Absorption (electromagnetic radiation) business |
Zdroj: | IEEE Photonics Technology Letters. 31:1619-1622 |
ISSN: | 1941-0174 1041-1135 |
Popis: | Due to relatively low responsivity at near infrared (NIR) wavelengths, surface-illuminated silicon (Si) photodiodes (PDs) are not attractive for ultra-fast data communication applications despite their CMOS-compatibility. Metal-semiconductor-metal (MSM) photodiodes are well-known for simplicity in fabrication compared to pin and pn junctions-based counterparts, but they usually work with lower efficiencies due to thin absorption layer that ensures high speed response. In this letter, we demonstrate a high efficiency and high-speed Si MSM PD with innovative photon-trapping surface structures. These wavelength-scale structures decrease the surface reflection and introduce laterally propagating waves parallel to the semiconductor surface. The responsivity of Si MSM PDs with the photon-trapping holes was measured to be ~0.59A/W, while the control devices without holes show ~0.08A/W. Such PDs with $50\mu \text{m}$ diameter and with 1 $\mu \text{m}$ finger spacing provide a pulse response of 60ps and 38ps full-width at half-maximum (FWHM) at 3V and 10V applied bias, respectively. Surface-illuminated PDs with these dimensions can offer easy optical coupling options for fiber optic links while offering complete CMOS compatibility. |
Databáze: | OpenAIRE |
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