Nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy

Autor:	Ouri Gorochov, Pierre Galtier, François Jomard, G. Amiri, Y. Marfaing, Vincent Sallet, J. Mimila-Arroyo, L. Svob, J. F. Rommeluère, Alain Lusson
Rok vydání:	2004
Předmět:	chemistry Diffusion Inorganic chemistry Oxidizing agent chemistry.chemical_element Metalorganic vapour phase epitaxy Conductivity Epitaxy Decomposition Nitrogen Acceptor
Zdroj:	physica status solidi (c). 1:904-907
ISSN:	1610-1634
DOI:	10.1002/pssc.200304251
Popis:	The incorporation of nitrogen as an acceptor in ZnO has been investigated in several ways. First, the growth parameters which allow achieving the lowest residual n type conductivity on undoped samples have been investigated. Second, nitrogen was introduced by means of diallylamine during metalorganic vapor phase epitaxy yielding incorporation of nitrogen in the range 1016–1021 cm−3 with a strong compensation of the natural donors. The effect of thermal annealing under oxidizing atmosphere leads to p-type conversion. Finally, diffusion of nitrogen was carried out on undoped MOVPE layers under high pressure conditions stemming from the decomposition of NH4NO3. Conversion to p-type conductivity was observed in a systematic way with measured hole concentrations up to 6.5 × 1017 cm−3. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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