DUV inspection beyond optical resolution limit for EUV mask of hp 1X nm
| Autor: | Akihiko Ando, Masamitsu Itoh, Takashi Hirano, Keiko Morishita, Ryoji Yoshikawa, Takashi Kamo, Masato Naka |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry Extreme ultraviolet lithography Mask inspection 02 engineering and technology 021001 nanoscience & nanotechnology medicine.disease_cause 01 natural sciences Nanoimprint lithography law.invention 010309 optics Optics Signal-to-noise ratio law Extreme ultraviolet 0103 physical sciences medicine Wafer 0210 nano-technology business Critical dimension Ultraviolet |
| Zdroj: | Photomask Technology. |
| DOI: | 10.1117/12.2280504 |
| Popis: | It is generally said that conventional deep ultraviolet inspection tools have difficulty meeting the defect requirement for extreme ultraviolet masks of hp 1X nm. In previous studies, it has been shown that the newly developed optics and systems using deep ultraviolet, named Super Inspection Resolution Improvement method for UnreSolved pattern (SIRIUS), has high sensitivity for nanoimprint lithography templates with unresolved patterns which are the same scale as the wafer. In this paper, the capability of SIRIUS for the extreme ultraviolet mask of hp 1X nm lines and spaces pattern has been studied by evaluating the signal to noise ratio of inspection images and capture rates with 5 runs to the target defects which cause over 10% printed wafer critical dimension errors calculated by simulation. It was demonstrated that the signal to noise ratio was increased and the all target defects became detectable with the throughput of 120 min per 100 × 100 mm2 . Additionally, the printability of natural defects detected with SIRIUS was analyzed. It was confirmed that SIRIUS was able to detect natural defects under 10% of wafer critical dimension. In conclusion, we confirm that SIRIUS can be available for the extreme ultraviolet mask inspection of hp 1X nm lines and spaces pattern. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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