CURRENT TRANSPORT MECHENISM IN THERMAL-LYNITRIDED SiO2 THIN FILMS

Autor:	Chen Dou-Nan, Chang Xue-Ren, Liu Bai-Yong
Rok vydání:	1989
Předmět:	Trap (computing) chemistry.chemical_compound Range (particle radiation) Chemistry Thermal Oxide Analytical chemistry General Physics and Astronomy Thin film Thermal conduction Molecular physics Quantum tunnelling Auger
Zdroj:	Acta Physica Sinica. 38:376
ISSN:	1000-3290
DOI:	10.7498/aps.38.376
Popis:	A new trap-assisted two-step tunneling model is proposed to explain the conduction enhancement characteristics and conduction mechanism in heavily-nitrided oxide films. A theoretical calculation is carried out to fit the theory to the experimental results. The trap density and trap energy level are found to be in the range of 1.2×1019-7.2×1020cm-3 and 2.46-2.56 eV respectively. These results agree satisfactorily with the Auger spectroscopic data. Furthermore, this model can also be applied MNOS structure or MIS devices with other traps.
Databáze:	OpenAIRE
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