| Autor: |
Kai-Jie Chuang, Wen-Jie Lin, Yu-Chun Chen, Tian-Wei Huang, Jeng-Han Tsai, Wei-Ting Bai |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). |
| DOI: |
10.1109/rfit52905.2021.9565301 |
| Popis: |
This paper presents a gain enhancement layout structure which improves the performance of millimeter-wave power amplifier in 2S-nm CMOS, especially small signal gain. The measurement results demonstrate that small signal gain increases 1.3-dB from 16.2 dB to 17.5 dB in V-band power amplifier by means of gain enhancement structure without expanding chip area. Additionally, this structure was also utilized in a published 28-nm wideband power amplifier to demonstrate a 20-dB small signal gain in 28 GHz without losing the broad bandwidth. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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