Investigation of Evolution Processes of Wafer Profiles With Edge Over Erosion in Copper CMP
| Autor: | Changfeng Yan, Lixiao Wu, Sookap Hahn |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science 020209 energy Metallurgy chemistry.chemical_element Polishing 02 engineering and technology Edge (geometry) Condensed Matter Physics 01 natural sciences Copper Line width Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Erosion Wafer Electrical and Electronic Engineering Composite material |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 30:69-77 |
| ISSN: | 1558-2345 0894-6507 |
| DOI: | 10.1109/tsm.2016.2631145 |
| Popis: | In this paper, the causes of edge over erosion (EOE) in copper CMP are investigated. Wafer patterns containing square-wave features with pattern density of 50% and line width of 0.18, 0.5, 1, and 2 μm are studied. The evolution processes of wafer profiles with EOE of the pattern structures are simulated by using frequency components algorithm (linear system method). The wafer profiles of the pattern structure of 0.18 μm at different polishing time are given. The results of the simulation of EOE, erosion and dishing of the pattern structures are compared with the experimental data. The effects of polishing parameters on the evolution process of height of ear profile, loss of Cu, erosion, dishing, height of area 1 of the different patterns are discussed. The methods to reduce the value of EOE and loss of Cu are provided. |
| Databáze: | OpenAIRE |
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