Controllable fabrication and field emission properties of cactus-like Cu2-xSe@Cu2-xSe nanowalls via the vertical secondary growth
Autor: | Rujia Zou, Zhiyuan Liu, Jibin Gong, Hou Xin, Hange Feng, Lingwei Li, Yinchu Gong, Shaolin Xue, Wei Xiaofan, Pei Xie |
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Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Fabrication Materials science Nanostructure business.industry Secondary growth Mechanical Engineering 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Field electron emission Mechanics of Materials Phase (matter) 0103 physical sciences Nano Optoelectronics General Materials Science 0210 nano-technology business |
Zdroj: | Materials Science in Semiconductor Processing. 100:310-318 |
ISSN: | 1369-8001 |
Popis: | The cactus-like Cu2-xSe@Cu2-xSe nanowalls was prepared by secondary growth method using Cu2-xSe nanowalls as substrate. This special nanostructure comprises Cu2-xSe nano spines neatly growing on the sharp edges of Cu2-xSe nanowalls. Reaction time has a powerful effect on the formation and morphologies of Cu2-xSe nanowalls. XRD analysis indicated the cubic berzelianite phase of Cu2-xSe. The cactus-like Cu2-xSe@Cu2-xSe nanowalls presents a better field electron emission performance than the first synthesized Cu2-xSe nanowalls, possessing the turn-on field 2.04 V/μm and the enhancement factor of 5181. The formation mechanism of cactus-like Cu2-xSe@Cu2-xSe nanowalls was discussed and proposed. The results indicated that the cactus-like Cu2-xSe@Cu2-xSe nanowalls can be used as a promising material in field emission applications. |
Databáze: | OpenAIRE |
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