A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency

Autor:	J. Marquart, Kevin J. Linthicum, Sameer Singhal, A.W. Hanson, P. Rajagopal, Jerry W. Johnson, R. Borges, A. Chaudhari, Robert Joseph Therrien, W. Nagy, C. Park, Andrew Edwards, Isik C. Kizilyalli
Rok vydání:	2006
Předmět:	Materials science business.industry Electrical engineering Impedance matching Gallium nitride Conductivity Heterostructure field effect transistors chemistry.chemical_compound High resistivity chemistry Optoelectronics Radio frequency business Drain efficiency Voltage
Zdroj:	IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Popis:	AlGaN/GaN heterostructure field effect transistors (HFETs) were fabricated with and without source field plates (SFP) on high resistivity Si (111) substrates. A single chip GaN HFET with a SFP achieved a saturated output power (Psat) of 368W (10.2W/mm) with 70% maximum drain efficiency (ηmax) when operated under pulsed RF conditions and a drain bias of 60V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::575b893132a02fbd749ab24b854556bf https://doi.org/10.1109/iedm.2005.1609410 Zobrazit plný text záznamu