Collisional quenching of indium (5p2 4P1/2) and indium (6p 2P) by Ar, H2, D2, N2, and CH4
Autor: | F. E. Hovis, J. A. Gelbwachs |
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Rok vydání: | 1983 |
Předmět: | |
Zdroj: | The Journal of Chemical Physics. 78:6680-6687 |
ISSN: | 1089-7690 0021-9606 |
DOI: | 10.1063/1.444667 |
Popis: | Collisional quenching of In(5p2 4P1/2) and In(6p 2P) by Ar, H2, D2, N2, and CH4 has been measured by laser pumping of the 5p2 4P1/2 level. The quenching cross sections for 5p2 4P1/2 range from 1.6×10−16 cm2 for Ar to 37×10−16 cm2 for H2. The cross sections for quenching the 6p 2P state range from 0.96×10−16 cm2 for Ar to 18×10−16 cm2 for H2. The radiative lifetimes of the 5p2 4P1/2 and 6p 2P state were found to be 950 and 104 ns. Population ratios measured under steady‐state conditions show that much of the excited‐state population resides in the 6s 2S1/2 level after excitation of the 5p2 4P1/2 or 5d 2D levels. |
Databáze: | OpenAIRE |
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