Influence of defect formation as a result of incorporation of a Mn δ layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells
| Autor: | E. D. Pavlova, A. P. Gorshkov, I. L. Kalenteva, I. A. Karpovich |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Condensed Matter::Other business.industry Heterojunction engineering.material Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Laser Evaporation (deposition) Atomic and Molecular Physics and Optics Spectral line Electronic Optical and Magnetic Materials law.invention Condensed Matter::Materials Science Coating law engineering Optoelectronics business Layer (electronics) Deposition (law) Quantum well |
| Zdroj: | Semiconductors. 46:184-187 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s106378261202011x |
| Popis: | The influence of defect formation upon the deposition of a Mn δ layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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