ZnO/c-Si Heterojunction Interface Tuning by Interlayers

Autor:	F. Fenske, K. Kliefoth, L. Elstner, B. Selle
Rok vydání:	1996
Předmět:	Materials science Silicon business.industry Photoconductivity Analytical chemistry chemistry.chemical_element Thermionic emission Heterojunction Band bending chemistry Ellipsometry Optoelectronics Quantum efficiency Electric current business
Zdroj:	MRS Proceedings. 426
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-426-135
Popis:	The junction properties of isotype and anisotype n+-ZnO/c-Si heterostructures have been studied by electrical and photoelectrical methods. We present evidence that the junction properties are strongly affected by a 10–30 nm thick ZnO layer closest to the heterointerface with distinctively different properties than those of the ZnO film bulk. This layer supports a dominant current flow via multistep tunnelling-recombination. When a 10 nm thin ZnS or ZnSe interlayer is inserted charge transport is controlled by thermionic emission. The interlayer acts as spacer and increases the band bending in the silicon absorber. However, there is still a too high trap density at the interlayer/c-Si interface, so that Voc does not exceed 0.25–0.32 V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::573be1db680e6dbe81e833ca9eee31d5 https://doi.org/10.1557/proc-426-135 Zobrazit plný text záznamu Full text from SpringerLink