Fabrication and Characterization of Solution Processed n-ZnO/p-Si Nano Heterojunction Diode

Autor:	Vinay Kabra, Lubna Hashmi, M.M. Malik
Rok vydání:	2015
Předmět:	Materials science Fabrication business.industry Transistor Heterojunction Dip-coating law.invention law Clamper Nano Optoelectronics Field-effect transistor business Diode
Zdroj:	Materials Today: Proceedings. 2:4544-4549
ISSN:	2214-7853
Popis:	Low cost nano hetero p-n junction (n-ZnO/p-Si) diode was fabricated between solution processed n-type ZnO nanoparticles and p-type Si substrate. Device was fabricated using dip coating technique and characterized by current-voltage characteristics (I-V) (under dark & UV illumination) and capacitance-voltage characteristics (C-V) under ambient condition. The junction shows good diode characteristics with a rectification ratio of 191 & 478 at 4 V and cut in voltage of 2 V and 0.8 V under dark and illumination respectively. Fabricated heterojunction diode will be used in switching, rectifier, clipper, clamper, heterojunction transistors (BJTs), field effect transistor (JFETs & MOSFETs), electronic circuitry etc.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::57277eaa3f3bc9f16ff941830f2a1d52 https://doi.org/10.1016/j.matpr.2015.10.068 Zobrazit plný text záznamu Full Text from ScienceDirect