On the low-temperature efficiency of photoluminescence in a-Si: H and other materials
| Autor: | G. K. Diprose, T.M. Searle, Mark Hopkinson, W. A. Jackson, A. J. Rhodes |
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| Rok vydání: | 1991 |
| Předmět: |
chemistry.chemical_classification
Range (particle radiation) Photoluminescence business.industry General Chemical Engineering Doping Analytical chemistry General Physics and Astronomy Microcrystalline Optics chemistry Radiative transfer business Inorganic compound Intensity (heat transfer) Excitation |
| Zdroj: | Philosophical Magazine B. 63:179-191 |
| ISSN: | 1463-6417 1364-2812 |
| DOI: | 10.1080/01418639108224439 |
| Popis: | We present new results on the excitation intensity and temperature dependence of the photoluminescence efficiency below 100K in a range of materials, largely but not exclusively based on a-Si: H. The results indicate that radiative rates which increase with increasing temperature, along with non-radiative rates which increase with intensity, are present in doped and undoped a-Si:H, a-Si:N:H, microcrystalline Si: H and crystalline As2Se3. A range of a-Si: H and a-Si: N: H films with different photoluminescence efficiencies has been investigated and provides further evidence for an intensity-dependent radiative rate, as well as for a sample-dependent competing non-radiative path. We discuss the mechanisms of these processes in terms of currrent models, suggesting links between the two intensity-dependent processes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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