Improved Uniformity of Resistive Switching Characteristics in Ge0.5Se0.5-based ReRAM Device Using the Ag Nanocrystal

Autor:	Hong-Bay Chung, Jang-Han Kim, Ki-Hyun Nam
Rok vydání:	2014
Předmět:	chemistry.chemical_compound Materials science chemistry Nanocrystal Chalcogenide business.industry Resistive switching Optoelectronics business Resistive random-access memory
Zdroj:	Journal of the Korean Institute of Electrical and Electronic Material Engineers. 27:491-496
ISSN:	1226-7945
DOI:	10.4313/jkem.2014.27.8.491
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::56fc115837e144df3d01329a1a55033f https://doi.org/10.4313/jkem.2014.27.8.491 Zobrazit plný text záznamu