Understanding LER-Induced MOSFET $V_{T}$ Variability—Part II: Reconstructing the Distribution

Autor:	Campbell Millar, Scott Roy, Asen Asenov, Dave Reid
Rok vydání:	2010
Předmět:	Physics Distribution (mathematics) Computer simulation MOSFET Electronic engineering Range (statistics) Statistical physics Function (mathematics) Electrical and Electronic Engineering Random variable Electronic Optical and Magnetic Materials Convolution Threshold voltage
Zdroj:	IEEE Transactions on Electron Devices. 57:2808-2813
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2010.2067732
Popis:	In this paper, we examine, in more detail, the strong correlation between the distribution of threshold voltage (VT) and the average channel length (LC) discovered in Part I of this paper. Based on the results of statistical analysis, we investigate an approach whereby the line-edge-roughness (LER)-induced distribution of VT can be reconstructed based on the convolution of the distribution of (LC) and the subdistributions of VT at particular values of (LC). Further analysis demonstrates that the actual shape of the subdistributions has little impact on the accuracy of the reconstruction. This result allows a fast and economical semianalytical approach for the simulation of LER-induced VT variability, based on the nonlinear transformation of the distribution of (LC) into the distribution of VT using the channel length dependence of the threshold voltage as a mapping function. The accuracy of the semianalytical approach has been confirmed by comparison with the distributions of VT obtained for a broad range of conventional and novel MOSFETs using comprehensive 3-D simulations.
Databáze:	OpenAIRE
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