Monolithically integrated 2×2 InGaAsP/InP laser amplifier gate switch arrays

Autor:	L. Lundgren, M. Janson, B. Stoltz, M. Gustavsson, Michael Rask, A.-C. Morner, Lars Thylen
Rok vydání:	1992
Předmět:	Optical amplifier Materials science Extinction ratio business.industry Amplifier Integrated circuit Laser Waveguide (optics) Optical switch law.invention Gallium arsenide chemistry.chemical_compound Optics chemistry law Optoelectronics Electrical and Electronic Engineering business
Zdroj:	Electronics Letters. 28:776
ISSN:	0013-5194
DOI:	10.1049/el:19920490
Popis:	Monolithically integrated 2*2 semiconductor laser amplifier gate switch arrays have been fabricated and evaluated. Net positive chip gain, high extinction ratio, and high electrical isolation between the integrated laser amplifiers are reported.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::56f7daadd048eb3fe57311d2203c95c5 https://doi.org/10.1049/el:19920490 Zobrazit plný text záznamu