Leakage Current Improvement of Doped and Bilayer High-k for MIM Capacitor

Autor:	Kyuho Cho, Cha Young Yoo, Han-jin Lim, Seok-Woo Nam
Rok vydání:	2010
Předmět:	Capacitor Materials science business.industry law Bilayer Doping Electrical engineering Optoelectronics business Leakage (electronics) High-κ dielectric law.invention
Zdroj:	ECS Transactions. 33:409-415
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3481629
Popis:	High-k dielectrics like Ta2O5, TiO2 etc. should overcome high leakage current due to the low energy band-gap property for applying to the future DRAM device below 50nm design rule beyond. Various techniques including metal doping and bi-layer scheme were studied to improve the leakage current of I-V characteristics. The leakage current of Dy or Zr doped TiO2 could be improved depending on the doping concentration. Nb doping in Ta2O5 could increase the dielectric constant within the appropriate level of leakage current at the operation voltage. Bi-layer scheme of high-k dielectrics like HfO2-TiO2 or ZrO2-TiO2 also applied to reduce the leakage current with the high work function Ru electrode. Combination of high work function Ru as a top electrode with the bottom TiN electrode could reduce the leakage current by increasing band offset at the interface between the high-k and the electrode.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::56f2b7eebae9aba57753e3b5dcd3cbb9 https://doi.org/10.1149/1.3481629 Zobrazit plný text záznamu