High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport

Autor:	William A. Doolittle, Greg Dunne, G. Augustine, Vijay Balakrishna, R.N. Thomas, H. McD. Hobgood, Ajeet Rohatgi, R.H. Hopkins
Rok vydání:	1998
Předmět:	Materials science Condensed matter physics Chemical engineering Mechanics of Materials Hall effect Vanadium doping Mechanical Engineering General Materials Science Condensed Matter Physics Semi insulating
Zdroj:	Materials Science Forum. :9-12
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.264-268.9
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::56f2673b85541051db9f246835d4b0b7 https://doi.org/10.4028/www.scientific.net/msf.264-268.9 Zobrazit plný text záznamu