Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures

Autor:	S. A. Muzafarova, Sh. A. Mirsagatov, F. N. Dzhamalov
Rok vydání:	2009
Předmět:	Photon Chemistry Gamma ray Heterojunction Charge carrier Charge (physics) Irradiation Atomic physics Condensed Matter Physics Atomic and Molecular Physics and Optics Cadmium telluride photovoltaics Recombination Electronic Optical and Magnetic Materials
Zdroj:	Semiconductors. 43:175-180
ISSN:	1090-6479 1063-7826
DOI:	10.1134/s1063782609020109
Popis:	Effect of irradiation with γ-ray photons on the mechanism of charge transport in an n-CdS/p-CdTe heterostructure is considered. It is shown that the forward current-voltage characteristic of an n-CdS/p-CdTe heterostructure before and after irradiation is described by two exponential dependences: I = I01exp(qV/C01kT) and I = I02exp(qV/C02kT). It is found that, in the first portion of the current-voltage characteristic, the current is limited by thermoelectronic emission while, in the second portion, the current is limited by recombination of nonequilibrium charge carriers in the electrically neutral portion of a CdTe1 − xSx alloy at the n-CdS/p-CdTe heteroboundary. Anomalous dose dependences of parameters of the n-CdS/p-CdTe heterosystem are attributed to a variation in the degree of compensation of local centers at the CdS-CdTe1 − xSx interface and in the CdTe1 − xSx layers in relation to the dose of irradiation with γ-ray photons.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::56ef326c4b07719b78aab947f36cb9e3 https://doi.org/10.1134/s1063782609020109 Zobrazit plný text záznamu Plný text ve formátu PDF