Variation of strain in granular GaAs:MnAs layers

Autor:	J. Bak-Misiuk, Elżbieta Dynowska, W. Caliebe, Janusz Sadowski, Andrzej Misiuk, P. Romanowski
Rok vydání:	2013
Předmět:	Materials science genetic structures Condensed matter physics Annealing (metallurgy) Hexagonal crystal system Hydrostatic pressure General Materials Science General Chemistry Condensed Matter Physics Layer thickness
Zdroj:	Crystallography Reports. 58:998-1001
ISSN:	1562-689X 1063-7745
DOI:	10.1134/s1063774513070043
Popis:	Granular GaAs(MnAs) layers with different Mn concentration and various layer thickness were grown by MBE method and subjected to annealing at 500°C under ambient and enhanced hydrostatic pressure. Distinct influence of hydrostatic pressure applied during annealing on strain state of layers as well as on hexagonal MnAs inclusions was found. Pressure induced strain of inclusions is related to different bulk moduli of GaAs and of hexagonal MnAs. Formation of hexagonal inclusions depends on concentration of Mn in interstitial position in as-grown samples.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::56d9defcfc41d4c4aab4bde7061f5d65 https://doi.org/10.1134/s1063774513070043 Zobrazit plný text záznamu Plný text ve formátu PDF