Formation of Narrow, Dry‐Etched Mesas for Long Wavelength InP ‐ InGaAsP Lasers
| Autor: | B. P. Segner, B. Tseng, Fan Ren, James Robert Lothian, C. Constantine, Stephen J. Pearton |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
Plasma etching Renewable Energy Sustainability and the Environment business.industry Heterojunction Photoresist Condensed Matter Physics Electron cyclotron resonance Surfaces Coatings and Films Electronic Optical and Magnetic Materials Optics Semiconductor Materials Chemistry Electrochemistry Wafer Dry etching business Lithography |
| Zdroj: | Journal of The Electrochemical Society. 140:3284-3289 |
| ISSN: | 1945-7111 0013-4651 |
| Popis: | The reproducible fabrication of narrow (∼1.1 μm wide) mesas for InP-InGaAsP buried heterostructure lasers requires development of high quality stepper lithography and anisotropic dry etching of both the SiO 2 etch/regrowth mask and the underlying semiconductor. Using a contrast enhancement method we demonstrate production of 1.1 μm photoresist lines with excellent uniformity (≤7% variation in width) over 2 in. O wafers. High fidelity pattern transfer to the underlying SiO 2 is achieved using a low pressure (1 mTorr) electron cyclotron resonance (ECR) SF 6 /Ar discharge with low additional dc bias (-75 V) on the sample |
| Databáze: | OpenAIRE |
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