2-20-GHz GaAs Traveling-Wave Amplifier

Autor:	Y. Ayasli, L.D. Reynolds, J.L. Vorhaus, L.K. Hanes
Rok vydání:	1984
Předmět:	Optical amplifier Power gain Frequency response Radiation Materials science business.industry Amplifier Condensed Matter Physics Noise figure Equivalent circuit Optoelectronics Electrical and Electronic Engineering business Direct-coupled amplifier DC bias
Zdroj:	IEEE Transactions on Microwave Theory and Techniques. 32:71-77
ISSN:	0018-9480
DOI:	10.1109/tmtt.1984.1132614
Popis:	Single-stage and two-stage GaAs traveling-wave amplifiers operating with flat gain responses in the 2-20-GHz frequency range are described. The circuits are realized in monolithic form on a 0.1-mm GaAs substrate with 50-Omega input and output lines. Complete gate and drain dc bias circuitry is included on the chip. By cascading these amplifier chips, a 30-dB gain in the 2-20-GHz range is demonstrated, with 9+-1dB noise figure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::56c5e685049ce0de75d3309d58dcb451 https://doi.org/10.1109/tmtt.1984.1132614 Zobrazit plný text záznamu