Sn-Doping Enhanced Ultrahigh Mobility In1–xSnxSe Phototransistor
| Autor: | Yang-Fang Chen, Kung-Hsuan Lin, Rajesh Kumar Ulaganathan, Hung-I Lin, Roshan Jesus Mathew, Chih-Hao Lee, Hsia Yu Lin, Yit-Tsong Chen, Raman Sankar, Vijay Kumar Gudelli, Christy Roshini Paul Inbaraj, Guang-Yu Guo, Yu-Ming Liao, Fangcheng Chou, Hao-Yu Cheng |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping Crystal system Oxide 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Photodiode law.invention Responsivity chemistry.chemical_compound Effective mass (solid-state physics) Semiconductor chemistry law 0103 physical sciences Optoelectronics General Materials Science 0210 nano-technology Ternary operation business |
| Zdroj: | ACS Applied Materials & Interfaces. 11:24269-24278 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.9b06433 |
| Popis: | Two-dimensional ternary materials are attracting widespread interest because of the additional degree of freedom available to tailor the material property for a specific application. An In1-xSnxSe phototransistor possessing tunable ultrahigh mobility by Sn-doping engineering is demonstrated in this study. A striking feature of In1-xSnxSe flakes is the reduction in the oxide phase compared to undoped InSe, which is validated by spectroscopic analyses. Moreover, first-principles density functional calculations performed for the In1-xSnxSe crystal system reveal the same effective mass when doped with Sn atoms. Hence, because of an increased lifetime owing to the enhanced crystal quality, the carriers in In1-xSnxSe have higher mobility than in InSe. The internally boosted electrical properties of In1-xSnxSe exhibit ultrahigh mobility of 2560 ± 240 cm2 V-1 s-1 by suppressing the interfacial traps with substrate modification and channel encapsulation. As a phototransistor, the ultrathin In1-xSnxSe flakes are highly sensitive with a detectivity of 1014 Jones. It possesses a large photoresponsivity and photogain (Vg = 40 V) as high as 3 × 105 A W-1 and 0.5 × 106, respectively. The obtained results outperform all previously reported performances of InSe-based devices. Thus, the doping-engineered In1-xSnxSe-layered semiconductor finds a potential application in optoelectronics and meets the demand for faster electronic technology. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|