The effect of RF-driven gate current on DC/RF performance in GaAs pHEMT MMIC power amplifiers
| Autor: | A.K. Oki, David Eng, Richard Lai, Q. Kan, T.R. Block, Yeong-Chang Chou, Denise Leung, A.K. Sharma |
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| Rok vydání: | 2005 |
| Předmět: |
Engineering
Radiation business.industry Amplifier Direct current Transistor Electrical engineering High-electron-mobility transistor Condensed Matter Physics law.invention Gallium arsenide chemistry.chemical_compound chemistry law Electrical and Electronic Engineering business Microwave Monolithic microwave integrated circuit V band |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 53:3398-3406 |
| ISSN: | 0018-9480 |
| Popis: | This paper describes RF-driven gate current effects on the dc/RF performance of 0.15-/spl mu/m (gate length) 2-mil (substrate thickness) GaAs pseudomorphic high-electron mobility transistor (pHEMT) monolithic microwave integrated circuit power amplifiers (PAs). High gate current is generated in PAs under RF drive at room temperature. A long-term lifetest of PAs with various gate currents induced by RF drive was performed to investigate the effect of RF-driven gate current on dc/RF performance in GaAs pHEMT PAs. Accordingly, an empirical model was developed to predict the dc/RF performance of V-band PA modules by the end of life (EOL). This information is crucial for system engineers in order to budget sufficient output power so that the system can still maintain performance capability by EOL. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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