On the way to modelling dopant valence in ionic crystal growth: the Ti:Al2O3 case
| Autor: | Lingling Xuan, Thierry Duffar |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | CrystEngComm. 24:4509-4518 |
| ISSN: | 1466-8033 |
| DOI: | 10.1039/d2ce00547f |
| Popis: | and kann obtained from numerical simulations of Ti:sapphire annealing experiments (left) and their applications during crystal growth (right). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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