Heteroepitaxy of Ni-Based Alloys on Diamond
| Autor: | Stanislav A. Evlashin, Sarkis A. Dagesian, R. A. Khmelnitsky, Alexey A. Gippius, Alexandr A. Alekseev, Nikolay V. Suetin, V. P. Martovitsky, Pavel V. Pastchenko |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Diffraction Materials science business.industry Material properties of diamond Diamond 02 engineering and technology General Chemistry Crystal structure engineering.material 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Rocking curve Crystallography Lattice (order) 0103 physical sciences engineering Optoelectronics Microelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | Crystal Growth & Design. 16:1420-1427 |
| ISSN: | 1528-7505 1528-7483 |
| DOI: | 10.1021/acs.cgd.5b01520 |
| Popis: | Growth of perfect heteroepitaxial metal layers on diamond can extend applications of diamond in microelectronics and open new areas for its use in devices with unique electrical properties for operations at elevated temperatures and in harsh environments. This work implements the heteroepitaxy of Ni-based alloys on single-crystal diamond and demonstrates a significant improvement of heteroepitaxial quality. The crystal lattices of the Ni–Cu, Ni–Cu–Cr, and Ni–W alloys used for heteroepitaxy have parameters close to those of diamond, a = 3.567 A. Heteroepitaxy was achieved on all diamond faces; the best results were obtained on the {100} faces. According to X-ray diffraction data, the lattice parameters of the heteroepitaxial films and diamond in the epitaxial plane differ by no more than 0.5%. The heteroepitaxial quality of the films is characterized by values of 0.3–0.4° of the full widths at half-maximum of the X-ray rocking curve. Structural perfection of the NiCu epitaxial layers becomes better when th... |
| Databáze: | OpenAIRE |
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