Comprehensive study on hot carrier reliability of radiation hardened H-gate PD SOI NMOSFET after gamma radiation
| Autor: | Ying Wei, Qiwen Zheng, Xuefeng Yu, Shanxue Xi, Qi Guo, Jiangwei Cui, Jinghao Zhao, Hang Zhou |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Radiation Materials science business.industry Gamma ray irradiation Silicon on insulator 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Hot carrier stress 01 natural sciences Reliability (semiconductor) 0103 physical sciences Optoelectronics General Materials Science Hot carrier reliability 0210 nano-technology business NMOS logic |
| Zdroj: | Radiation Effects and Defects in Solids. 174:606-616 |
| ISSN: | 1029-4953 1042-0150 |
| Popis: | The authors perform gamma ray irradiation and hot carrier stress on RH H-Gate PD (partially depleted) SOI NMOSFETs as the experimental group and commercial strip-shaped gate PD SOI NMOSFETs... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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