Solution-processed organic field-effect transistors based on dinaphthothienothiophene precursor with chemically modified electrodes

Autor:	Takashi Kobayashi, Hiroyoshi Naito, Azusa Hamaguchi, Yu Kimura, Souichiro Abe, Yoshinori Ikeda, Takashi Nagase
Rok vydání:	2017
Předmět:	History Materials science business.industry Transistor Electrical contacts Computer Science Applications Education law.invention Solution processed chemistry.chemical_compound chemistry law Electrode Thiophene Optoelectronics Molecule Field-effect transistor business
Zdroj:	Journal of Physics: Conference Series. 924:012008
ISSN:	1742-6596 1742-6588
Popis:	Bottom-gate organic field-effect transistors (OFETs) based on a soluble precursor of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) with bottom-contact source-drain electrodes chemically modified with pentafluorobenzenethiol (PFBT) have been fabricated. The preparation of DNTT films using CYTOP overcoat layers allows the solution processing of bottom-gate/bottom-contact DNTT FETs with good electrical contacts between the PFBT-treated Au electrodes and the DNTT molecules. The DNTT FETs processed using CYTOP overcoat layers exhibit the field-effect mobilities of up to 0.37 cm2 V−1 s−1. High maximum mobility of 0.29 cm2 V−1 s−1 has been achieved in solution-processed DNTT FETs with channel length of 5 μm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5666546c19ba2c8861aa05cdf139a182 https://doi.org/10.1088/1742-6596/924/1/012008 Zobrazit plný text záznamu