Spatial localization of dominating deep centers in multicrystalline silicon solar cells
| Autor: | V. G. Mishustin, A. D. Maslov, V. V. Gudzev, E. V. Bezuglaya, A. V. Ermachikhin, Yu. V. Vorobyov |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Recombination rate chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Temperature measurement chemistry Depletion region 0103 physical sciences Optoelectronics Spontaneous emission Spatial localization Charge carrier 0210 nano-technology business Recombination |
| Zdroj: | MECO |
| DOI: | 10.1109/meco.2018.8405998 |
| Popis: | In this paper we focused on separation of dominating recombination region that limits total charge carrier lifetime and efficiency in conventional multicrystalline silicon solar cell. According to the Grover's model, we considered SRH-recombination in 3 active regions: interface, depletion region and quasi neutral part of base. We present theoretical calculations and experimental measurements to estimate contribution of every region in total recombination rate. We found that charge carrier lifetime of investigated multicrystalline silicon solar cells is limited by charge carrier recombination in the depletion region. |
| Databáze: | OpenAIRE |
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