Characteristics of Thin Layers of SiO2 Fabricated by Rapid Thermal Oxidation

Autor:	R. Früchtnicht, J. Haase, D. Haack, S. Prasad, R. Ferretti
Rok vydání:	1987
Předmět:	Metal Thermal oxidation Materials science Semiconductor Thin layers business.industry visual_art State density visual_art.visual_art_medium Optoelectronics Work function Growth rate business
Zdroj:	MRS Proceedings. 92
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-92-109
Popis:	Thin layers of SiO2 (60-300 Å) were fabricated by rapid thermal oxidation (RTO). Growth rate on (100) and (111) Si was determined. Two different high-temperature anneal cycles were used to reduce the interface state density. Work function difference between metal and semiconductor depends upon technology and can be attributed to the changes in Si-SiO2 barrier height.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::564bbd70ed330a7db90af466b657895a https://doi.org/10.1557/proc-92-109 Zobrazit plný text záznamu Full text from SpringerLink