Chemical‐vapor deposition of metallic copper film in the presence of oxygen

Autor:	H. Dallaporta, Z. Hammadi, B. Lecohier
Rok vydání:	1993
Předmět:	Auger electron spectroscopy Transition metal Chemistry Torr Analytical chemistry General Physics and Astronomy chemistry.chemical_element Chemical vapor deposition Thin film Deposition (chemistry) Copper Oxygen
Zdroj:	Journal of Applied Physics. 73:5213-5215
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.353748
Popis:	Chemical‐vapor deposition of copper using copper (II) bis(acetylacetonate) is reported. It is shown that at 0.1 Torr and temperatures in the range of 250–350 °C, the deposition occurs only if oxygen is added in the reactor. Auger spectroscopy, x‐ray‐diffraction, and resistance measurements as a function of temperature lead to the conclusion that metallic copper is deposited.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5631873915d6194d0005dcd6a6884520 https://doi.org/10.1063/1.353748 Zobrazit plný text záznamu