Dielectric properties of srtio3 thin films with ca and zr partial substitutions for active microwave applications
| Autor: | Steven W. Kirchoefer, James S. Horwitz, L.A. Knauss, Jeffrey M. Pond, Douglas B. Chrisey, Carl H. Mueller, Randolph E. Treece |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Analytical chemistry Dielectric Condensed Matter Physics Capacitance Electronic Optical and Magnetic Materials law.invention Pulsed laser deposition Capacitor Control and Systems Engineering law Electric field Torr Materials Chemistry Ceramics and Composites Dissipation factor Electrical and Electronic Engineering Thin film |
| Zdroj: | Integrated Ferroelectrics. 15:173-180 |
| ISSN: | 1607-8489 1058-4587 |
| Popis: | The structure and dielectric properties of SrTiO3 thin films with either 5% Ca or Zr substitutions have been investigated. Thin films of these materials were deposited onto (100) LaAlO3 substrates by pulsed laser deposition (PLD) at temperatures of 750°C in 350 m Torr of oxygen. As-deposited films, characterized by x-ray diffraction, were single phase and well oriented with ω - scan widths of < 0.2° for the (002) reflection. The capacitance and dissipation factor were measured at 1 MHz to 1 GHz for the deposited films as a function of temperature and electric field (80 kV/cm) using Ag interdigital capacitors deposited on top of the SrTiO3 films. For unsubstituted SrTiO3, a peak in the capacitance vs. temperature curve was observed at ∼60K. The temperature dependence of the dissipation factor was similar and also exhibited a maximum at 60K with a value of 0.025. A 50% change in the capacitance can be achieved for the SrTiO3 film at ∼80 kV/cm. Substitution of 5% Ca on the Sr site does not change th... |
| Databáze: | OpenAIRE |
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