Bulk electrochemical etching of semiconductor single-crystal silicon in HF-containing solutions

Autor:	I. L. Baranov, L. V. Tabulina, T. G. Rusal’skaya
Rok vydání:	2012
Předmět:	Silicon Chemistry business.industry General Chemical Engineering Metallurgy Polishing chemistry.chemical_element General Chemistry Electrolyte Semiconductor Etching (microfabrication) Optoelectronics Wafer Dry etching Reactive-ion etching business
Zdroj:	Russian Journal of Applied Chemistry. 85:1544-1549
ISSN:	1608-3296 1070-4272
Popis:	Effect of the component composition of an HF-containing electrolytic aqueous solution on the polishing electrochemical etching of semiconductor single-crystal silicon was studied. Propanol-2, SV-1017, and NH4F served as additional components of solutions used for this purpose. The conditions in which this process can be employed to form elements with 3D structure in microsystems devices were determined. An analysis of the results obtained led to an assumption that the hydrogen passivation of the surface of semiconductor single-crystal silicon is the rate-determining factor affecting the development of a bulk polishing electrochemical etching of this material. Because the process of polishing electrochemical etching of silicon wafers is preserved during approximately 20 min, the method is acceptable for formation of shallow grooves in microsystems devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::56189977c382fbfc6d76e2367d89d407 https://doi.org/10.1134/s1070427212100102 Zobrazit plný text záznamu Full text from SpringerLink