AlGaN/GaN heterojunction field effect transistors grown by nitrogen plasma assisted molecular beam epitaxy

Autor:	Paul Hashimoto, P. Janke, Miroslav Micovic, L.G. McCray, A. Kurdoghlian, Jeong-Sun Moon, Chanh Nguyen, D. Wong
Rok vydání:	2001
Předmět:	Power-added efficiency Materials science business.industry Amplifier Wide-bandgap semiconductor Heterojunction Electronic Optical and Magnetic Materials Optoelectronics Continuous wave Field-effect transistor Electrical and Electronic Engineering business Microwave Molecular beam epitaxy
Zdroj:	IEEE Transactions on Electron Devices. 48:591-596
ISSN:	0018-9383
DOI:	10.1109/16.906456
Popis:	In this work, we demonstrate state of the art performance of GaN HFETs grown on SiC by rf Nitrogen plasma assisted molecular beam epitaxy (MBE) at 10 and 20 GHz and good power scalability of these devices at 10 GHz. A single stage power amplifier built by power combining four of our 1 mm devices exhibits continuous wave output power of 22.9 W with associated power added efficiency (PAE) of 37% at 9 GHz. This is to the best of our knowledge the highest CW power and the best combination of power and PAE demonstrated to date for a GaN based microwave integrated circuit at this frequency.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5616e8f8bad4e59a0d3beceb44068006 https://doi.org/10.1109/16.906456 Zobrazit plný text záznamu