Effect of ammonia plasma treatment on the luminescence and stability of porous silicon
Autor: | M. Pérez, M. Villagrán-Muniz, Guillermo Santana, M.F. García-Sánchez, B. de la Mora, A. Dutt, E. Mon-Pérez |
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Rok vydání: | 2018 |
Předmět: |
Materials science
Photoluminescence Hydrogen Scanning electron microscope Mechanical Engineering Analytical chemistry Dangling bond chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Porous silicon 01 natural sciences 0104 chemical sciences chemistry Mechanics of Materials General Materials Science Fourier transform infrared spectroscopy 0210 nano-technology Spectroscopy Luminescence |
Zdroj: | Materials Letters. 216:277-280 |
ISSN: | 0167-577X |
DOI: | 10.1016/j.matlet.2018.01.113 |
Popis: | Effect of ammonia plasma on the luminescence and stability of the porous silicon (PS) has been studied. Samples were cut into different parts to compare the as-deposited sample with the low (5 W) and high RF power (75 W) treated parts. Scanning electron microscopy (SEM) shown that the samples treated at 5 W did not demonstrate a change in the structural aspects, whereas, samples treated at 75 W shown some modifications in the final structure. Photoluminescence (PL) spectroscopy revealed strong diminishment in the luminescence as an outcome of plasma treatment for both samples. In comparison to sample treated at 5 W, high RF power treated sample did not show recovery in the PL with the course of time. Fourier transform infrared (FTIR) analysis shown the alterations in the hydrogen and oxygen bonding with time for the sample treated at 5 W. On the other hand, the appearance of stable nitrogen peaks (Si-N, N-H) were found for the other sample. PL quenching could be due to the appearance of plasma-induced defects and/or hydrogen-related dangling bonds and further shown the stability of the sample treated at 75 W (no recovery in PL) for optoelectronic applications. |
Databáze: | OpenAIRE |
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